ROLE:Senior R&D Engineer – MOCVD/Epitaxy/GaN
LOCATION: Cambridge, UK
SALARY: £50, - £65,
DURATION: Permanent, full time

My client is providing state-of-art process technologies and device solutions to unleash the full potential of GaN to revolutionise the electronics industry. Our products have enormous applications in microLED, energy efficient lighting and power management, as well as lasers, quantum light sources, sensors, and energy generation.

•Develop advanced MOVPE process for novel porous GaN structures to support R&D projects and product development for major global customers
•Work with new and existing suppliers and contractors to deliver required epitaxial wafers into various technology projects according to the work schedule and specs
•Document and implement R&D practices, approaches and policies
•Contribute to the development of in-house characterisation capabilities to minimize the learning cycle time
•Support production by analysing the connection between epi process and the device data to improve yield and performance

To be considered for this position you will need the following:
•PhD or Master degree in Electrical Engineering, Physics, Materials Engineering or related field or equivalent experience with good background knowledge on GaN materials and LED devices.
•Hands on experience in GaN-on-Si epitaxy
•MOCVD process development with a proven track record
• Strong understanding of the dependence of LED device performance on epitaxy process and design
•Good understanding of GaN materials and device characterisation techniques, such as XRD, PL, AFM, SEM, TEM, EL etc.

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